![]() ![]() The future work is to replace the Bulk-CMOS with the nano-CMOS and make the system faster. The merits of small scale are also discussed. FinFET will replace the traditional MOSFET due to its better performance in sub 20nm regime and also it has excellent control over the problems faced by the Traditional CMOS.The objective is to simulate the inverter circuit using CMOS through MATLAB. FinFET is likely to meet the performance requirements in the sub-20nm gate length regime. Due to some limitations, the CMOS were facing some of the problems like Drain induced barrier lowering (DIBL), Velocity Saturation, Punch through, Oxide Breakdown, Channel length modulation.Hence due to the above factors, FinFET technology has proposed as an alternative to deep submicron bulk CMOS. The above results showed that, as we go on reducing the size, the performance enhances. The outputs were observed and the time delay was calculated. where we can vary the physical dimensions of the MOSFET. We have simulated the inverter circuit using CMOS in MATLAB, DSCH3. In this article, we proposed a methodology to find the problems occurring while scaling it into small size with some factor. Due to scaling, leakage power accounts for an increasingly large portion of the total power consumption in deep submicron technologies. Hence in modern power circuits, the main factor of the circuit efficiency is power efficiency. ![]() According to Moore’s Law, the no of transistors in an IC chip doubles every 18 months.
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